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Saiful Alam is a highly skilled GaN Product Development Engineer at IQE, with extensive experience in MOCVD epitaxy of GaN-based materials for various applications. Previous roles include Adjunct Lecturer at Cardiff University School of Engineering, where Saiful taught Digital Electronics, and a postdoctoral research associate at the Compound Semiconductor Centre. Saiful also held research positions at Georgia Institute of Technology focusing on the growth of III-N layer structures and h-BN materials, and at CEA as a doctoral researcher. Saiful's background features a progression from technical project management at Robi Axiata Limited to significant academic and industrial research achievements, complemented by a diverse educational foundation in engineering and physics across multiple prestigious institutions.