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Megha Krishnaji Rao is a scientific researcher at Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, specializing in integrated transceivers for 5G mobile communications utilizing strained GaN-HEMT technology since March 2020. Key contributions include the design of a novel MMIC transceiver and robust Low Noise Amplifiers with dual functionality. Previous experience includes a Master Thesis at Rohde & Schwarz, focusing on the development of a 20W Ultra-Wideband Power Amplifier, along with roles in 3D printing and characterization of RF devices. Megha holds a Master of Science in Microwave Circuits & Systems from HSB Hochschule Bremen and a Bachelor of Engineering in Microwaves & Radar from the Bangalore Institute of Technology.