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Gerhard Fasol has extensive work experience in various industries and roles. Gerhard is currently the CEO and Producer at Eurotechnology Japan K.K. since September 1996. In addition, they serve as the Chair at Trinity in Japan starting from September 2014.

Gerhard also played a significant role as the Creator and Curator at Ludwig Boltzmann Forum, beginning in January 2008. At this forum, they brought together industry, academic, and government leaders, including Nobel Prize winners, to leverage science and technology for creating positive change.

Gerhard worked as a Guest Professor at Kyushu University from April 2017 to March 2020 and served as a Board Director and Supervisory Committee Member at GMO GlobalSign Holdings KK from March 2014 to March 2018.

In 2007 and 2008, Gerhard worked at CLSA as an Advisor, Blue Book Author, and Roadshow participant. Prior to this, they were an Advisor to JETRO Chairman Mr. Hatakeyama from 2002 to 2004.

Gerhard Fasol started their career as an Associate Professor at the University of Tokyo, Department of Electrical Engineering, in October 1991. Gerhard led a research group focusing on opto-electronics, spin-electronics, and MRAM. Additionally, they conducted research in nanotechnology and nanodevices as the R&D Laboratory Manager and Chief Scientist at Hitachi from October 1990 to September 1991.

Furthermore, Gerhard Fasol achieved recognition as the first non-Japanese to deliver results as a "Sakigake" (= Pioneer) R&D Project Leader at Japan Science and Technology Agency (JST) from September 1993 to August 1996. During this time, they developed ultra-thin nanowires and worked on devices utilizing electron spin and magnetic properties.

Gerhard Fasol pursued their education in a field of physics, beginning in 1972 at Ruhr University Bochum. Gerhard completed their undergraduate studies there and received a Diplom-Physiker degree in 1978. Shortly after, from 1978 to 1981, they attended both the University of Cambridge and Trinity College Cambridge, where they earned a PhD in Semiconductor Physics and Physics, respectively.