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Saba Rajabi is a seasoned semiconductor device engineer currently serving as a Staff R&D Device Engineer at Vishay Intertechnology, Inc. since August 2021. Prior experience includes roles as Staff Device Engineer and Senior Device Integration Engineer at Global Communication Semiconductors, Inc. from January 2019 to August 2021, and as a Research Assistant at the Next Generation Power Device Lab and the University of California, Davis from September 2016 to August 2018. Saba’s expertise encompasses the design, simulation, fabrication, and electrical characterization of semiconductor devices, with notable projects focusing on N-polar GaN-based vertical transistors and E-mode AlGaN/GaN MOS-HEMTs. Educational credentials include a Doctor of Philosophy in Electrical and Electronics Engineering from the University of California, Davis, and advanced degrees from Arizona State University.