Anass Jakani is currently a research engineer at Thales and III-V Lab, having held the position since 2023. Prior to this, Anass served as a postdoctoral researcher at XLIM from October 2019 to April 2023, focusing on the characterization of trapping and self-heating phenomena in GaN HEMT transistors. Anass also completed a doctoral research program at XLIM, specializing in RF systems within the high-frequency electronics domain and developing a thermo-reflectance measurement setup for power components and circuits. Anass obtained a doctorate in high-frequency electronics, photonics, and systems from Université de Limoges between September 2019 and November 2022, following a degree in engineering with a focus on high technology, electronics, optics, and telecommunications from the same university, completed in 2019.
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