ÂÜÀòÂÒÂ×

Riccardo Soligo, PhD has a wealth of experience in the engineering field. From 2010 to 2016, they were a Research Assistant at Ira A. Fulton Schools of Engineering, where they worked on GaN HEMT devices for millimeter and sub-millimeter power amplifiers, InP HEMT devices for THz electronics, GaN HET devices for THz electronics, large-signal computational characterization of microwave solid-state electronic devices, RF Power Amplifiers, small-signal computational characterization of microwave solid-state electronic devices, implementation of trap assisted tunneling for device simulations, design of a four probes sensor to detect optical pulses, and optimization of device layout for higher breakdown voltage. From 2016 onwards, they have been employed at Global Communication Semiconductors, Inc. as a Staff Engineer, Sr Modeling Engineer, and Modeling Engineer. As a Sr Modeling Engineer, they were responsible for RF characterization and modeling of the foundry, defining test plans, coordinating with process, reliability, failure analysis and test engineers, and hiring and managing engineers. As a Modeling Engineer, they were responsible for linear and non-linear Foundry models, RF characterization of all Foundry processes, assembling an RF lab, developing and maintaining models, evaluating RF performance, and managing a technician.

Riccardo Soligo, PhD obtained their Doctor of Philosophy (Ph.D.) in Solid-State Electronics from Arizona State University between 2010 and 2015. Prior to that, they obtained a Master's Degree in Microelectronics from Università degli Studi di Padova between 2007 and 2009. Riccardo also obtained a Bachelor's Degree in Bioengineering and Biomedical Engineering from Università degli Studi di Padova between 2004 and 2007. Riccardo attended liceo prior to that.