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Feiyuan Yang is a skilled Power Device Engineer at Cambridge GaN Devices Ltd since January 2024, specializing in device characterization and data analysis using Python. Prior experience includes a role as KTP associate at Dynex Semiconductor Ltd from February 2022 to January 2024, where Feiyuan designed fabrication flows for E-mode power GaN HEMTs and developed layout designs for GaN HEMT, Schottky barrier diodes, and PCM structures. Feiyuan also served as a teaching assistant at the University of Bristol from September 2018 to August 2019, focusing on fundamental physical lab concepts. Feiyuan holds a Doctor of Philosophy in Physics from the University of Bristol (2017-2022) and a Bachelor of Engineering in Materials Science from Shanghai Jiao Tong University (2013-2017).